There are no models available for this part yet.
Overview of IRF5M3710SCV by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 9 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF5M3710SCV by Infineon Technologies AG
Part Data Attributes for IRF5M3710SCV by Infineon Technologies AG
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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HERMETIC SEALED PACKAGE-3
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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350 mJ
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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35 A
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Drain-source On Resistance-Max
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0.03 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-254AA
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JESD-30 Code
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S-MSFM-P3
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Number of Elements
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1
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Number of Terminals
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3
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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METAL
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Package Shape
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SQUARE
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Package Style
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FLANGE MOUNT
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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140 A
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Surface Mount
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NO
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Terminal Form
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PIN/PEG
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRF5M3710SCV
This table gives cross-reference parts and alternative options found for IRF5M3710SCV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5M3710SCV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AP50T10GJ-HF | TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | IRF5M3710SCV vs AP50T10GJ-HF |
| IPD35N10S3L-26 | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRF5M3710SCV vs IPD35N10S3L-26 |
| SUD35N10-26P-T4GE3 | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | IRF5M3710SCV vs SUD35N10-26P-T4GE3 |
| IPD25CN10NGXT | Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRF5M3710SCV vs IPD25CN10NGXT |
| FDD3670 | 100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, 2500-REEL | onsemi | IRF5M3710SCV vs FDD3670 |
| IRF5M3710SCX | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | IRF5M3710SCV vs IRF5M3710SCX |
| AP50T10GS-HF | TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | IRF5M3710SCV vs AP50T10GS-HF |
| AP50T10GH-HF | TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | IRF5M3710SCV vs AP50T10GH-HF |
| IPB35N10S3L26ATMA1 | Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | IRF5M3710SCV vs IPB35N10S3L26ATMA1 |