Part Details for IPB35N10S3L26ATMA1 by Infineon Technologies AG
Overview of IPB35N10S3L26ATMA1 by Infineon Technologies AG
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPB35N10S3L26ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1657
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Newark | Mosfet, Aec-Q101, N-Ch, 100V, To-263, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0203Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Infineon IPB35N10S3L26ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 985 |
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$1.0200 / $2.1500 | Buy Now |
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DISTI #
448-IPB35N10S3L26ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 35A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5480 In Stock |
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$0.8670 / $2.0700 | Buy Now |
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DISTI #
726-IPB35N10S3L26ATM
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Mouser Electronics | MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant | 5125 |
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$0.8960 / $1.8800 | Buy Now |
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DISTI #
V72:2272_06384799
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Arrow Electronics | Trans MOSFET N-CH 100V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2305 Container: Cut Strips | Americas - 299 |
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$0.8894 / $1.3001 | Buy Now |
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Future Electronics | Single N-Channel 100 V 26.3 mOhm 30 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.8800 / $0.9450 | Buy Now |
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DISTI #
71240896
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Verical | Trans MOSFET N-CH 100V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 20 Package Multiple: 1 Date Code: 2322 | Americas - 1000 |
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$1.0888 / $1.6125 | Buy Now |
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DISTI #
67611853
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Verical | Trans MOSFET N-CH 100V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2305 | Americas - 299 |
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$0.8894 / $1.3001 | Buy Now |
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Rochester Electronics | IPB35N10S3L-26 - 100V, N-Ch, Automotive MOSFET, OptiMOS-T RoHS: Compliant Status: Active Min Qty: 1 | 3752 |
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$0.8598 / $1.0100 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 860 |
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$2.0703 / $2.4129 | Buy Now |
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Chip1Cloud | MOSFET N-CH TO263-3 | 28000 |
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RFQ |
Part Details for IPB35N10S3L26ATMA1
IPB35N10S3L26ATMA1 CAD Models
IPB35N10S3L26ATMA1 Part Data Attributes:
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IPB35N10S3L26ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB35N10S3L26ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 175 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.0322 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 75 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB35N10S3L26ATMA1
This table gives cross-reference parts and alternative options found for IPB35N10S3L26ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB35N10S3L26ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB35N10S3L-26 | Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB35N10S3L26ATMA1 vs IPB35N10S3L-26 |