Part Details for EPA060B-70 by Excelics Semiconductor Inc
Overview of EPA060B-70 by Excelics Semiconductor Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for EPA060B-70
EPA060B-70 CAD Models
EPA060B-70 Part Data Attributes:
|
EPA060B-70
Excelics Semiconductor Inc
Buy Now
Datasheet
|
Compare Parts:
EPA060B-70
Excelics Semiconductor Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET, 0.070 INCH, CERAMIC PACKAGE-4
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | EXCELICS SEMICONDUCTOR INC | |
Package Description | MICROWAVE, X-CXMW-F4 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 10 V | |
Drain Current-Max (ID) | 0.11 A | |
FET Technology | HETERO-JUNCTION | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | X-CXMW-F4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | UNSPECIFIED | |
Package Style | MICROWAVE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.78 W | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | UNSPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for EPA060B-70
This table gives cross-reference parts and alternative options found for EPA060B-70. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of EPA060B-70, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
ATF-36077-STR | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Hewlett Packard Co | EPA060B-70 vs ATF-36077-STR |
ATF-36077-TR | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, CERAMIC, MICROSTRIP PACKAGE-4 | Avago Technologies | EPA060B-70 vs ATF-36077-TR |
ATF-36077-TRI | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | EPA060B-70 vs ATF-36077-TRI |
ATF-36077STR | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Avago Technologies | EPA060B-70 vs ATF-36077STR |
ATF-36077STRG | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, | Broadcom Limited | EPA060B-70 vs ATF-36077STRG |
ATF-36077-TR1 | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Hewlett Packard Co | EPA060B-70 vs ATF-36077-TR1 |
ATF-36077-TRI | KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET, CERAMIC, MICROSTRIP PACKAGE-4 | Avago Technologies | EPA060B-70 vs ATF-36077-TRI |
ATF-36077-TR | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, CERAMIC, MICROSTRIP PACKAGE-4 | Broadcom Limited | EPA060B-70 vs ATF-36077-TR |
ATF-36077TR1G | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET, | Broadcom Limited | EPA060B-70 vs ATF-36077TR1G |
ATF-36077STR | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET | Hewlett Packard Co | EPA060B-70 vs ATF-36077STR |