EPA060B-70
vs
ATF-36077-TRI
feature comparison
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
EXCELICS SEMICONDUCTOR INC
|
BROADCOM LTD
|
Package Description |
MICROWAVE, X-CXMW-F4
|
DISK BUTTON, O-CRDB-F4
|
Pin Count |
4
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.95
|
|
Additional Feature |
HIGH RELIABILITY
|
LOW NOISE
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
10 V
|
3 V
|
Drain Current-Max (ID) |
0.11 A
|
|
FET Technology |
HETERO-JUNCTION
|
HIGH ELECTRON MOBILITY
|
Highest Frequency Band |
KU BAND
|
KU BAND
|
JESD-30 Code |
X-CXMW-F4
|
O-CRDB-F4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
UNSPECIFIED
|
ROUND
|
Package Style |
MICROWAVE
|
DISK BUTTON
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
0.78 W
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
UNSPECIFIED
|
RADIAL
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
GALLIUM ARSENIDE
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
Yes
|
Case Connection |
|
SOURCE
|
JESD-609 Code |
|
e4
|
Moisture Sensitivity Level |
|
1
|
Power Gain-Min (Gp) |
|
11 dB
|
Qualification Status |
|
Not Qualified
|
Terminal Finish |
|
GOLD
|
|
|
|
Compare EPA060B-70 with alternatives
Compare ATF-36077-TRI with alternatives