Datasheets
CLY35-00ES by:

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN

Part Details for CLY35-00ES by Infineon Technologies AG

Overview of CLY35-00ES by Infineon Technologies AG

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for CLY35-00ES

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CLY35-00ES Part Data Attributes:

CLY35-00ES Infineon Technologies AG
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CLY35-00ES Infineon Technologies AG RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 14 V
Drain Current-Max (ID) 2.8 A
FET Technology METAL SEMICONDUCTOR
Highest Frequency Band C BAND
JESD-30 Code R-CDFM-F2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 175 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 18 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM ARSENIDE

Alternate Parts for CLY35-00ES

This table gives cross-reference parts and alternative options found for CLY35-00ES. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CLY35-00ES, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CLY35-00ES RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN TriQuint Semiconductor CLY35-00ES vs CLY35-00ES
CLY35-00ES RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Qorvo CLY35-00ES vs CLY35-00ES
Part Number Description Manufacturer Compare
CLY35-05P RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN TriQuint Semiconductor CLY35-00ES vs CLY35-05P
CLY35-10S RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Infineon Technologies AG CLY35-00ES vs CLY35-10S
CLY35-10ES RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Infineon Technologies AG CLY35-00ES vs CLY35-10ES
CLY35-10S RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET Siemens CLY35-00ES vs CLY35-10S
CLY35-00H RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Infineon Technologies AG CLY35-00ES vs CLY35-00H
CLY35-10P RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET Siemens CLY35-00ES vs CLY35-10P
CLY35-05ES RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN TriQuint Semiconductor CLY35-00ES vs CLY35-05ES
CLY35-00S RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Qorvo CLY35-00ES vs CLY35-00S
CLY35-05H RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET Siemens CLY35-00ES vs CLY35-05H
CLY35-00H RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN Qorvo CLY35-00ES vs CLY35-00H

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