Parametric results for: CLY35-00ES under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

HIGH RELIABILITY 4

4 hits Apply

SOURCE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

14 V 4

4 hits Apply

Drain Current-Max (ID) (1)

2.8 A 4

4 hits Apply

METAL SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

C BAND 4

4 hits Apply

R-CDFM-F2 4

4 hits Apply

e3 1 e4 2

4 hits Apply

Manufacturer (4)

Infineon Technologies AG 1 Qorvo 1 Siemens 1 TriQuint Semiconductor 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

175.0 °C 2

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Obsolete 1 Transferred 3

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

18 W 1

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply