Part Details for CLY35-00S by Qorvo
Overview of CLY35-00S by Qorvo
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for CLY35-00S
CLY35-00S CAD Models
CLY35-00S Part Data Attributes
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CLY35-00S
Qorvo
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Datasheet
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CLY35-00S
Qorvo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | QORVO INC | |
Package Description | HERMETIC SEALED, MWP-35, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 14 V | |
Drain Current-Max (ID) | 2.8 A | |
FET Technology | METAL SEMICONDUCTOR | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-CDFM-F2 | |
JESD-609 Code | e4 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | GOLD | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for CLY35-00S
This table gives cross-reference parts and alternative options found for CLY35-00S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CLY35-00S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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CLY35-00H | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | Siemens | CLY35-00S vs CLY35-00H |
CLY35-10S | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | TriQuint Semiconductor | CLY35-00S vs CLY35-10S |
CLY35-10ES | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | TriQuint Semiconductor | CLY35-00S vs CLY35-10ES |
CLY35-00ES | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | Infineon Technologies AG | CLY35-00S vs CLY35-00ES |
CLY35-00H | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | Qorvo | CLY35-00S vs CLY35-00H |
CLY35-10ES | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | Qorvo | CLY35-00S vs CLY35-10ES |
CLY35-05P | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | Infineon Technologies AG | CLY35-00S vs CLY35-05P |
CLY35-10ES | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | Siemens | CLY35-00S vs CLY35-10ES |
CLY35-05H | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | TriQuint Semiconductor | CLY35-00S vs CLY35-05H |
CLY35-05ES | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, MWP-35, 3 PIN | TriQuint Semiconductor | CLY35-00S vs CLY35-05ES |