Part Details for BUZ21SMD by Infineon Technologies AG
Overview of BUZ21SMD by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BUZ21SMD
BUZ21SMD CAD Models
BUZ21SMD Part Data Attributes:
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BUZ21SMD
Infineon Technologies AG
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Datasheet
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BUZ21SMD
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 84 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for BUZ21SMD
This table gives cross-reference parts and alternative options found for BUZ21SMD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ21SMD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS4228TRRPBF | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | Infineon Technologies AG | BUZ21SMD vs IRFS4228TRRPBF |
| IRFS250B_FP001 | Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-3PF, 3 PIN | Fairchild Semiconductor Corporation | BUZ21SMD vs IRFS250B_FP001 |
| MTW26N15E | 26A, 150V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | BUZ21SMD vs MTW26N15E |
| SGSP577 | 20A, 200V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | BUZ21SMD vs SGSP577 |
| 2SK3600-01SJ | Power Field-Effect Transistor, 20A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Fuji Electric Co Ltd | BUZ21SMD vs 2SK3600-01SJ |
| RFH25N20 | Power Field-Effect Transistor, 25A I(D), 200V, 1.875ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Harris Semiconductor | BUZ21SMD vs RFH25N20 |
| FDD3690_NL | Power Field-Effect Transistor, 22A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | BUZ21SMD vs FDD3690_NL |
| SUM85N15-19-E3 | TRANSISTOR 85 A, 150 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN, FET General Purpose Power | Vishay Siliconix | BUZ21SMD vs SUM85N15-19-E3 |
| RFH25N20 | 25A, 200V, 1.875ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Intersil Corporation | BUZ21SMD vs RFH25N20 |
| SUM75N15-18P-E3 | Power Field-Effect Transistor, 75A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | BUZ21SMD vs SUM75N15-18P-E3 |