Part Details for BUZ11 by Harris Semiconductor
Overview of BUZ11 by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ11
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 90 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 11 |
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$0.5813 / $0.6975 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1584 |
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$0.3023 / $1.1625 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 43 |
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$4.8000 / $7.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 7 |
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$1.5600 / $2.0800 | Buy Now |
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Perfect Parts Corporation | 26 |
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RFQ |
Part Details for BUZ11
BUZ11 CAD Models
BUZ11 Part Data Attributes
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BUZ11
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
BUZ11
Harris Semiconductor
Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 400 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 400 ns | |
| Turn-on Time-Max (ton) | 155 ns |
Alternate Parts for BUZ11
This table gives cross-reference parts and alternative options found for BUZ11. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ11, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ11 | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | TT Electronics Resistors | BUZ11 vs BUZ11 |
| BUZ11S2 | Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Siemens | BUZ11 vs BUZ11S2 |
| BUZ11S2 | 30A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | BUZ11 vs BUZ11S2 |
| BUZ11 | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Siemens | BUZ11 vs BUZ11 |