Part Details for BUZ12A by Siemens
Overview of BUZ12A by Siemens
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ12A
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 1 |
|
Buy Now |
Part Details for BUZ12A
BUZ12A CAD Models
BUZ12A Part Data Attributes:
|
BUZ12A
Siemens
Buy Now
Datasheet
|
Compare Parts:
BUZ12A
Siemens
Power Field-Effect Transistor, 42A I(D), 50V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
|
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 41 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 420 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 125 W | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 168 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 460 ns | |
Turn-on Time-Max (ton) | 180 ns |
Alternate Parts for BUZ12A
This table gives cross-reference parts and alternative options found for BUZ12A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ12A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BUZ11 | 30A, 50V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | BUZ12A vs BUZ11 |
AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | BUZ12A vs AUIRFZ34N |
MTP36N06V | 32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | BUZ12A vs MTP36N06V |
IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | BUZ12A vs IRFZ34N |
AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | BUZ12A vs AUIRFZ34N |
IRFZ34NPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | BUZ12A vs IRFZ34NPBF |
BUZ11S2 | 30A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | BUZ12A vs BUZ11S2 |
MTP36N06V | 32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | BUZ12A vs MTP36N06V |
BUZ11 | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Motorola Semiconductor Products | BUZ12A vs BUZ11 |
BUZ11 | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | BUZ12A vs BUZ11 |