Part Details for IRFZ34NPBF by International Rectifier
Overview of IRFZ34NPBF by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFZ34NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 16 |
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Bristol Electronics | 1035 |
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Quest Components | 29 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 158 |
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$0.3098 / $0.6639 | Buy Now |
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Quest Components | 29 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 124 |
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$0.5533 / $1.1065 | Buy Now |
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Quest Components | 29 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 40 |
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$0.6125 / $1.2250 | Buy Now |
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Quest Components | 29 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 12 |
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$2.6840 / $3.6600 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 91 |
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Part Details for IRFZ34NPBF
IRFZ34NPBF CAD Models
IRFZ34NPBF Part Data Attributes:
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IRFZ34NPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFZ34NPBF
International Rectifier
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 65 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 29 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFZ34NPBF
This table gives cross-reference parts and alternative options found for IRFZ34NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ34NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
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| IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRFZ34NPBF vs IRFZ34N |
| IRFZ34NPBF | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFZ34NPBF vs IRFZ34NPBF |
| AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | International Rectifier | IRFZ34NPBF vs AUIRFZ34N |
| MTP36N06V | 32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRFZ34NPBF vs MTP36N06V |
| AUIRFZ34N | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRFZ34NPBF vs AUIRFZ34N |
| IRFZ34N | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRFZ34NPBF vs IRFZ34N |