Part Details for BTS115AE3045 by Infineon Technologies AG
Overview of BTS115AE3045 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Automotive
Motor control systems
Part Details for BTS115AE3045
BTS115AE3045 CAD Models
BTS115AE3045 Part Data Attributes
|
|
BTS115AE3045
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BTS115AE3045
Infineon Technologies AG
Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB SMD VERSION, 3 PIN
|
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB SMD VERSION, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 15.5 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 62 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BTS115AE3045
This table gives cross-reference parts and alternative options found for BTS115AE3045. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BTS115AE3045, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BTS130E3045 | Power Field-Effect Transistor, 27A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN | Infineon Technologies AG | BTS115AE3045 vs BTS130E3045 |
| BTS121AE3045 | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN | Infineon Technologies AG | BTS115AE3045 vs BTS121AE3045 |
| BTS121AE3045 | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN | Siemens | BTS115AE3045 vs BTS121AE3045 |
| BTS121A-E3045 | 22A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, 3 PIN | Siemens | BTS115AE3045 vs BTS121A-E3045 |