Part Details for BSS123G by Galaxy Microelectronics
Overview of BSS123G by Galaxy Microelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSS123G
BSS123G CAD Models
BSS123G Part Data Attributes
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BSS123G
Galaxy Microelectronics
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Datasheet
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BSS123G
Galaxy Microelectronics
Small Signal Field-Effect Transistor,
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Part Life Cycle Code | Active | |
Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
Package Description | , | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 2.8 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.35 W | |
Power Dissipation-Max (Abs) | 0.35 W | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSS123G
This table gives cross-reference parts and alternative options found for BSS123G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSS123G vs BSS123 |
BSS123 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | Texas Instruments | BSS123G vs BSS123 |
BSS123-7 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | BSS123G vs BSS123-7 |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN | Infineon Technologies AG | BSS123G vs BSS123 |
BSS123 | Small Signal Field-Effect Transistor, | Galaxy Microelectronics | BSS123G vs BSS123 |
BSS123L99Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123G vs BSS123L99Z |
BSS123/L99Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123G vs BSS123/L99Z |
BSS123-13 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | BSS123G vs BSS123-13 |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AA | Motorola Semiconductor Products | BSS123G vs BSS123 |
BSS123D87Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123G vs BSS123D87Z |