BSS123G vs BSS123 feature comparison

BSS123G Galaxy Microelectronics

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BSS123 Motorola Semiconductor Products

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD MOTOROLA INC
Package Description ,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 10 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.8 pF 4 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 125 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.35 W 0.55 W
Reference Standard MIL-STD-202
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Rohs Code No
HTS Code 8541.21.00.95
JEDEC-95 Code TO-236AA
JESD-609 Code e0
Operating Temperature-Min -55 °C
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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