Part Details for BSM200GB120DN2 by Infineon Technologies AG
Overview of BSM200GB120DN2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSM200GB120DN2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Igbt 200A 1200V Dual | 1540 |
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RFQ |
Part Details for BSM200GB120DN2
BSM200GB120DN2 CAD Models
BSM200GB120DN2 Part Data Attributes
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BSM200GB120DN2
Infineon Technologies AG
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Datasheet
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BSM200GB120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 290 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1400 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 630 ns | |
| Turn-on Time-Nom (ton) | 190 ns | |
| VCEsat-Max | 3.2 V |
Alternate Parts for BSM200GB120DN2
This table gives cross-reference parts and alternative options found for BSM200GB120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GB120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | BSM200GB120DN2 vs APTGT200A120D3G |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs FF200R12KS4 |
| BSM150GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs BSM150GB120DLCHOSA1 |
| FF200R12KT3EHOSA1 | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs FF200R12KT3EHOSA1 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | BSM200GB120DN2 vs CM300DU-24H |
| FF200R12KT3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs FF200R12KT3 |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs BSM100GB120DLCHOSA1 |
| FF200R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs FF200R12KS4HOSA1 |
| FF200R12KE4HOSA1 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | BSM200GB120DN2 vs FF200R12KE4HOSA1 |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | BSM200GB120DN2 vs MII300-12A4 |