Part Details for BSM200GA120DN2 by Infineon Technologies AG
Overview of BSM200GA120DN2 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSM200GA120DN2
| Part # | Distributor | Description | Stock | Price | Buy | |
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Ameya Holding Limited | Min Qty: 10 | 44 |
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$258.2289 / $274.4488 | Buy Now |
Part Details for BSM200GA120DN2
BSM200GA120DN2 CAD Models
BSM200GA120DN2 Part Data Attributes
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BSM200GA120DN2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSM200GA120DN2
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 550 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1550 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 630 ns | |
| Turn-on Time-Nom (ton) | 210 ns | |
| VCEsat-Max | 3.2 V |
Alternate Parts for BSM200GA120DN2
This table gives cross-reference parts and alternative options found for BSM200GA120DN2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GA120DN2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSM200GA120DN2HOSA1 | Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | Infineon Technologies AG | BSM200GA120DN2 vs BSM200GA120DN2HOSA1 |