Datasheets
BLW80 by:

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

Part Details for BLW80 by Advanced Semiconductor Inc

Overview of BLW80 by Advanced Semiconductor Inc

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Applications Consumer Electronics

Part Details for BLW80

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BLW80 Part Data Attributes:

BLW80 Advanced Semiconductor Inc
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BLW80 Advanced Semiconductor Inc RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 17 V
Configuration SINGLE
DC Current Gain-Min (hFE) 10
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code O-CRPM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style POST/STUD MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 17 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for BLW80

This table gives cross-reference parts and alternative options found for BLW80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLW80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
ULBM5 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc BLW80 vs ULBM5
BLW80 TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-122A, 4 PIN, BIP RF Power NXP Semiconductors BLW80 vs BLW80
Part Number Description Manufacturer Compare
SD4017 UHF BAND, Si, NPN, RF POWER TRANSISTOR, M142, 6 PIN STMicroelectronics BLW80 vs SD4017
2SC2782 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, 2-13C1A, 6 PIN, BIP RF Power Toshiba America Electronic Components BLW80 vs 2SC2782
MRF240A RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc BLW80 vs MRF240A
SD1143 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, PLASTIC, M135, 4 PIN Microsemi Corporation BLW80 vs SD1143
SD1272 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M135, 4 PIN Advanced Power Technology BLW80 vs SD1272
2SC2782 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 Advanced Semiconductor Inc BLW80 vs 2SC2782
SD1075 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Advanced Power Technology BLW80 vs SD1075
2N3632 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Microsemi Corporation BLW80 vs 2N3632
ULBM10 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, 0.280 INCH, STUD PACKAGE-4 Advanced Semiconductor Inc BLW80 vs ULBM10
SD1477 VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, 6 PIN STMicroelectronics BLW80 vs SD1477

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