Parametric results for: BLW80 under Other Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

1 A 5

5 hits Apply

Collector-Emitter Voltage-Max (1)

17 V 3

5 hits Apply

Configuration (1)

SINGLE 5

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DC Current Gain-Min (hFE) (1)

10.0 5

5 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 3

5 hits Apply

O-CRPM-F4 2

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Manufacturer (5)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 2

5 hits Apply

200.0 °C 4

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

5 hits Apply

ROUND 2

5 hits Apply

POST/STUD MOUNT 2

5 hits Apply

Active 2 Obsolete 1 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

17 W 1

5 hits Apply

17 W 3

5 hits Apply

Power Gain-Min (Gp) (1)

8.0 dB 1

5 hits Apply

Surface Mount (1)

NO 4

5 hits Apply

Transition Frequency-Nom (fT) (2)

1.25 GHz 1 1.75 GHz 1

Min (MHz) - Max (MHz)

5 hits Apply