Part Details for BLA6H0912-500,112 by Ampleon
Overview of BLA6H0912-500,112 by Ampleon
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Environmental Monitoring
Industrial Automation
Price & Stock for BLA6H0912-500,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-7545-ND
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DigiKey | RF MOSFET LDMOS 50V SOT634A Min Qty: 60 Lead time: 16 Weeks Container: Tray | Temporarily Out of Stock |
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$587.6552 | Buy Now |
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DISTI #
BLA6H0912-500,112
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Avnet Americas | RF Components - Rail/Tube (Alt: BLA6H0912-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$600.0192 / $700.0224 | Buy Now |
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DISTI #
BLA6H0912-500,112
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Avnet Americas | RF Components - Rail/Tube (Alt: BLA6H0912-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$600.0192 / $700.0224 | Buy Now |
|
DISTI #
BLA6H0912-500,112
|
Avnet Americas | RF Components - Rail/Tube (Alt: BLA6H0912-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$600.0192 / $700.0224 | Buy Now |
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Flip Electronics | Stock | 16 |
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RFQ |
Part Details for BLA6H0912-500,112
BLA6H0912-500,112 CAD Models
BLA6H0912-500,112 Part Data Attributes
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BLA6H0912-500,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLA6H0912-500,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 54 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLA6H0912-500,112
This table gives cross-reference parts and alternative options found for BLA6H0912-500,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLA6H0912-500,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934062292112 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET | NXP Semiconductors | BLA6H0912-500,112 vs 934062292112 |
| BLA6H0912-500 | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLA6H0912-500,112 vs BLA6H0912-500 |