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RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PACKAGE-4
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BFP183
Infineon Technologies AG
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Datasheet
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BFP183
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PACKAGE-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOW NOISE | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.065 A | |
Collector-Base Capacitance-Max | 0.5 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 50 | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.45 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 8000 MHz |
This table gives cross-reference parts and alternative options found for BFP183. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFP183, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
2N5032 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 | Motorola Mobility LLC | BFP183 vs 2N5032 |
BFG91A | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | NXP Semiconductors | BFP183 vs BFG91A |
BFR180W | RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFP183 vs BFR180W |
BF770A | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236, SOT-23, 3 PIN | Siemens | BFP183 vs BF770A |
MRF904 | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN | Advanced Semiconductor Inc | BFP183 vs MRF904 |
BFR181-E6327 | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN | Siemens | BFP183 vs BFR181-E6327 |
BFP182W | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFP183 vs BFP182W |
BFG196 | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN | Siemens | BFP183 vs BFG196 |
NE94430-T2 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | California Eastern Laboratories (CEL) | BFP183 vs NE94430-T2 |
BFR280W | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, SOT-323, 3 PIN | Infineon Technologies AG | BFP183 vs BFR280W |