BFP183 vs NE94430-T2 feature comparison

BFP183 Infineon Technologies AG

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NE94430-T2 California Eastern Laboratories (CEL)

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG CALIFORNIA EASTERN LABORATORIES
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G3
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature LOW NOISE
Case Connection COLLECTOR
Collector Current-Max (IC) 0.065 A 0.05 A
Collector-Base Capacitance-Max 0.5 pF 1.2 pF
Collector-Emitter Voltage-Max 12 V 15 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 50 40
Highest Frequency Band L BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G4 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.45 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 2000 MHz
Base Number Matches 10 1
VCEsat-Max 0.5 V

Compare BFP183 with alternatives

Compare NE94430-T2 with alternatives