Part Details for BFP182W by Infineon Technologies AG
Overview of BFP182W by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BFP182W
BFP182W CAD Models
BFP182W Part Data Attributes
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BFP182W
Infineon Technologies AG
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Datasheet
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BFP182W
Infineon Technologies AG
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | TR, 7 INCH: 3000 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.035 A | |
Collector-Base Capacitance-Max | 0.5 pF | |
Collector-Emitter Voltage-Max | 12 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 70 | |
Highest Frequency Band | L BAND | |
JESD-30 Code | R-PDSO-G4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.25 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 8000 MHz |
Alternate Parts for BFP182W
This table gives cross-reference parts and alternative options found for BFP182W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFP182W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BFR180 | RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN, SOT-23, 3 PIN | Infineon Technologies AG | BFP182W vs BFR180 |
BFP193W | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, SOT-343, 4 PIN | Infineon Technologies AG | BFP182W vs BFP193W |
NE68633-T1 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, C Band, Silicon, NPN, | NEC Electronics America Inc | BFP182W vs NE68633-T1 |
2SC3510RF | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92 | Hitachi Ltd | BFP182W vs 2SC3510RF |
2SC2714 | TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal | Toshiba America Electronic Components | BFP182W vs 2SC2714 |
BFQ81W | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-323, 3 PIN | Infineon Technologies AG | BFP182W vs BFQ81W |
BF799W | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFP182W vs BF799W |
2SC2735 | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 | Hitachi Ltd | BFP182W vs 2SC2735 |
2SC3513IS-TL | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-3 | Renesas Electronics Corporation | BFP182W vs 2SC3513IS-TL |
2SC4255 | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | Toshiba America Electronic Components | BFP182W vs 2SC4255 |