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TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal
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2SC2714
Toshiba America Electronic Components
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Datasheet
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2SC2714
Toshiba America Electronic Components
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236, S-MINI, 2-3F1A, SC-59, 3 PIN, BIP RF Small Signal
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | |
Additional Feature | LOW NOISE | |
Collector Current-Max (IC) | 0.02 A | |
Collector-Emitter Voltage-Max | 30 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.1 W | |
Power Gain-Min (Gp) | 17 dB | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 550 MHz |
This table gives cross-reference parts and alternative options found for 2SC2714. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SC2714, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2SC3510RF | RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-92 | Hitachi Ltd | 2SC2714 vs 2SC3510RF |
NE68633-T1 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, C Band, Silicon, NPN, | NEC Electronics America Inc | 2SC2714 vs NE68633-T1 |
BFP136W | RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN | Siemens | 2SC2714 vs BFP136W |
BFP193W | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN | Siemens | 2SC2714 vs BFP193W |
2SC3587 | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon, NPN | NEC Electronics Group | 2SC2714 vs 2SC3587 |
2SC3510RR | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 | Renesas Electronics Corporation | 2SC2714 vs 2SC3510RR |
BFR181W | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | 2SC2714 vs BFR181W |
BFR280 | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, L Band, Silicon, NPN, SOT-23, 3 PIN | Infineon Technologies AG | 2SC2714 vs BFR280 |
BF775W | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | 2SC2714 vs BF775W |
BFR181W | RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT, SOT-323, 3 PIN | Infineon Technologies AG | 2SC2714 vs BFR181W |