Part Details for BFG540,215 by NXP Semiconductors
Overview of BFG540,215 by NXP Semiconductors
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Education and Research
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Audio and Video Systems
Computing and Data Storage
Aerospace and Defense
Healthcare
Electronic Manufacturing
Telecommunications
Automotive
Price & Stock for BFG540,215
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Perfect Parts Corporation | 2175 |
|
RFQ |
Part Details for BFG540,215
BFG540,215 CAD Models
BFG540,215 Part Data Attributes
|
|
BFG540,215
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
BFG540,215
NXP Semiconductors
BFG540 - NPN 9 GHz wideband transistor SOT-143 4-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT-143 | |
| Package Description | PLASTIC PACKAGE-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT143B | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 0.12 A | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 60 | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | CECC | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 9000 MHz |
Alternate Parts for BFG540,215
This table gives cross-reference parts and alternative options found for BFG540,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG540,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BF771E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, | Infineon Technologies AG | BFG540,215 vs BF771E6327 |
| BFG540W/XR | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4 | NXP Semiconductors | BFG540,215 vs BFG540W/XR |
| BF771E6327HTSA1 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, | Infineon Technologies AG | BFG540,215 vs BF771E6327HTSA1 |
| BF771E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN | Siemens | BFG540,215 vs BF771E6327 |
| BFG520W/XR | TRANSISTOR X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal | NXP Semiconductors | BFG540,215 vs BFG520W/XR |
| BF771 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | BFG540,215 vs BF771 |
| 934030630115 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | NXP Semiconductors | BFG540,215 vs 934030630115 |
| BFR193E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | Siemens | BFG540,215 vs BFR193E6327 |
| BFR193E6327 | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, | Infineon Technologies AG | BFG540,215 vs BFR193E6327 |