Part Details for AP50T10GH-HF by Advanced Power Electronics Corp
Overview of AP50T10GH-HF by Advanced Power Electronics Corp
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Automotive
Part Details for AP50T10GH-HF
AP50T10GH-HF CAD Models
AP50T10GH-HF Part Data Attributes:
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AP50T10GH-HF
Advanced Power Electronics Corp
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Datasheet
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AP50T10GH-HF
Advanced Power Electronics Corp
TRANSISTOR 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ADVANCED POWER ELECTRONICS CORP | |
| Part Package Code | TO-252 | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AP50T10GH-HF
This table gives cross-reference parts and alternative options found for AP50T10GH-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP50T10GH-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5M3710PBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | AP50T10GH-HF vs IRF5M3710PBF |
| IPD35N10S3L-26 | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | AP50T10GH-HF vs IPD35N10S3L-26 |
| IRF540Z | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | AP50T10GH-HF vs IRF540Z |
| IPD35N10S3L26ATMA1 | Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | AP50T10GH-HF vs IPD35N10S3L26ATMA1 |
| SUD35N10-26P-T4GE3 | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 | Vishay Intertechnologies | AP50T10GH-HF vs SUD35N10-26P-T4GE3 |
| FDD3670 | 100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, 2500-REEL | onsemi | AP50T10GH-HF vs FDD3670 |
| AP50T10GP-HF | TRANSISTOR 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | AP50T10GH-HF vs AP50T10GP-HF |
| IPB35N10S3L26ATMA1 | Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | Infineon Technologies AG | AP50T10GH-HF vs IPB35N10S3L26ATMA1 |
| IRF5M3710SCV | Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | AP50T10GH-HF vs IRF5M3710SCV |