Memory
X28C010NM-20T1
Description: 128KX8 EEPROM 5V, 200ns, CQCC32, CERAMIC, EXTENDED, LCC-32

Overview of X28C010NM-20T1 by Intersil Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Computing and Data Storage Financial Technology (Fintech) Telecommunications Renewable Energy Robotics and Drones

Available Datasheets

Part # Manufacturer Description Datasheet
2SK520-T1B-A Renesas Electronics Corporation Switching N-Channel Power Mosfet
UPA2520T1H-T2-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching
UPD166020T1F-E1-AY Renesas Electronics Corporation Protected and Intelligent Power Switches, MP-3ZK, /Embossed Tape

CAD Models for X28C010NM-20T1 by Intersil Corporation
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Part Data Attributes for X28C010NM-20T1 by Intersil Corporation

X28C010NM-20T1
Intersil Corporation
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Part Package Code
QFJ
Package Description
QCCN,
Pin Count
32
Reach Compliance Code
compliant
ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.51
Access Time-Max
200 ns
JESD-30 Code
R-CQCC-N32
Length
17.78 mm
Memory Density
1048576 bit
Memory IC Type
EEPROM
Memory Width
8
Number of Functions
1
Number of Terminals
32
Number of Words
131072 words
Number of Words Code
128000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
125 °C
Operating Temperature-Min
-55 °C
Organization
128KX8
Output Characteristics
3-STATE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Code
QCCN
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER
Parallel/Serial
PARALLEL
Programming Voltage
5 V
Qualification Status
Not Qualified
Seated Height-Max
3.048 mm
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
MILITARY
Terminal Form
NO LEAD
Terminal Pitch
1.27 mm
Terminal Position
QUAD
Width
11.43 mm
Write Cycle Time-Max (tWC)
10 ms
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  1. X28C010NM-20T1
    Intersil Corporation
    128KX8 EEPROM 5V, 200ns, CQCC32, CERAMIC, EXTENDED, LCC-32
    VS

Alternate Parts for X28C010NM-20T1

This table gives cross-reference parts and alternative options found for X28C010NM-20T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of X28C010NM-20T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
TT28HT010G-20ET EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Twilight Technology Inc X28C010NM-20T1 vs TT28HT010G-20ET
TT28HT010G-20EM EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Twilight Technology Inc X28C010NM-20T1 vs TT28HT010G-20EM
5962-3826717QUX EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Micross Components X28C010NM-20T1 vs 5962-3826717QUX
X28C010NMB-20T1 EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, EXTENDED, LCC-32 Xicor Inc X28C010NM-20T1 vs X28C010NMB-20T1
5962-3826703MUX EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32 Microchip Technology Inc X28C010NM-20T1 vs 5962-3826703MUX
5962-3826703MUA EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Xicor Inc X28C010NM-20T1 vs 5962-3826703MUA
X28C010NI-20T1 128KX8 EEPROM 5V, 200ns, CQCC32, CERAMIC, EXTENDED, LCC-32 Intersil Corporation X28C010NM-20T1 vs X28C010NI-20T1
5962-3826703MUX EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, LCC-32 Teledyne e2v X28C010NM-20T1 vs 5962-3826703MUX
X28C010N-20 EEPROM, 128KX8, 200ns, Parallel, CMOS, CQCC32, CERAMIC, EXTENDED, LCC-32 Xicor Inc X28C010NM-20T1 vs X28C010N-20
Part Number Description Manufacturer Compare
X28C010NI-25T1 128KX8 EEPROM 5V, 250ns, CQCC32, CERAMIC, EXTENDED, LCC-32 Intersil Corporation X28C010NM-20T1 vs X28C010NI-25T1
DPV27C101G-250M UVPROM, 128KX8, 250ns, CMOS, CQCC32, LCC-32 B&B Electronics Manufacturing Company X28C010NM-20T1 vs DPV27C101G-250M
27C1001MEQ20 UVPROM, 128KX8, 200ns, CMOS, CQCC32, CERAMIC, LCC-32 Thales Group X28C010NM-20T1 vs 27C1001MEQ20
5962-8961407MYA UVPROM, 128KX8, 90ns, CMOS, CQCC32, CERAMIC, LCC-32 QP Semiconductor X28C010NM-20T1 vs 5962-8961407MYA
DPV27C101G-200B UVPROM, 128KX8, 200ns, CMOS, CQCC32, LCC-32 B&B Electronics Manufacturing Company X28C010NM-20T1 vs DPV27C101G-200B
5962-8961416MYA UVPROM, 128KX8, 35ns, CMOS, CQCC32, CERAMIC, LCC-32 QP Semiconductor X28C010NM-20T1 vs 5962-8961416MYA
5962-8961401MYC UVPROM, 128KX8, 300ns, CMOS, CQCC32, CERAMIC, LCC-32 QP Semiconductor X28C010NM-20T1 vs 5962-8961401MYC
MFM8126WMB-12E Flash, 128KX8, 120ns, CQCC32, CERAMIC, LCC-32 Mosaic Semiconductor Inc X28C010NM-20T1 vs MFM8126WMB-12E
5962-8961415MYC UVPROM, 128KX8, 45ns, CMOS, CQCC32, CERAMIC, LCC-32 QP Semiconductor X28C010NM-20T1 vs 5962-8961415MYC
5962-8961404MYX UVPROM, 128KX8, 170ns, CMOS, CQCC32, CERAMIC, LCC-32 QP Semiconductor X28C010NM-20T1 vs 5962-8961404MYX

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