Part Details for W3HG128M64EEU806D4SG by Microsemi Corporation
Overview of W3HG128M64EEU806D4SG by Microsemi Corporation
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- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for W3HG128M64EEU806D4SG
W3HG128M64EEU806D4SG CAD Models
W3HG128M64EEU806D4SG Part Data Attributes
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W3HG128M64EEU806D4SG
Microsemi Corporation
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Datasheet
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W3HG128M64EEU806D4SG
Microsemi Corporation
DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | SODIMM | |
Package Description | DIMM, | |
Pin Count | 200 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 0.45 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-XZMA-N200 | |
JESD-609 Code | e4 | |
Memory Density | 8589934592 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 128MX64 | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Finish | GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | ZIG-ZAG |
Alternate Parts for W3HG128M64EEU806D4SG
This table gives cross-reference parts and alternative options found for W3HG128M64EEU806D4SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W3HG128M64EEU806D4SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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M470T2863FB3-CE6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | W3HG128M64EEU806D4SG vs M470T2863FB3-CE6 |
M470T2863FB3-CE7 | DDR DRAM Module, 128MX64, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | W3HG128M64EEU806D4SG vs M470T2863FB3-CE7 |
HYMP512S64BLP8-Y5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | W3HG128M64EEU806D4SG vs HYMP512S64BLP8-Y5 |
NT1GT64U8HA0BN-3C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200 | Nanya Technology Corporation | W3HG128M64EEU806D4SG vs NT1GT64U8HA0BN-3C |
HYMP112S64AP6-Y5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | SK Hynix Inc | W3HG128M64EEU806D4SG vs HYMP112S64AP6-Y5 |
EBE11UD8AGUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | W3HG128M64EEU806D4SG vs EBE11UD8AGUA-6E-E |
HYS64T128020EDL-3-C | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200 | Qimonda AG | W3HG128M64EEU806D4SG vs HYS64T128020EDL-3-C |
M470T2864QZ3-LE6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200 | Samsung Semiconductor | W3HG128M64EEU806D4SG vs M470T2864QZ3-LE6 |
HYS64T128921HDL-3S-B | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SO-DIMM-200 | Qimonda AG | W3HG128M64EEU806D4SG vs HYS64T128921HDL-3S-B |
W3HG264M64EEU665D4GG | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SO-DIMM-200 | Microsemi Corporation | W3HG128M64EEU806D4SG vs W3HG264M64EEU665D4GG |