W3HG128M64EEU806D4SG vs M470T2863FB3-CE6 feature comparison

W3HG128M64EEU806D4SG Microsemi Corporation

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M470T2863FB3-CE6 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICROSEMI CORP SAMSUNG SEMICONDUCTOR INC
Part Package Code SODIMM MODULE
Package Description DIMM, DIMM, DIMM200,24
Pin Count 200 200
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-XZMA-N200 R-XDMA-N200
JESD-609 Code e4
Memory Density 8589934592 bit 8589934592 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE
Memory Width 64 64
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 128MX64 128MX64
Package Body Material UNSPECIFIED UNSPECIFIED
Package Code DIMM DIMM
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified Not Qualified
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish GOLD
Terminal Form NO LEAD NO LEAD
Terminal Position ZIG-ZAG DUAL
Base Number Matches 1 1
Clock Frequency-Max (fCLK) 333 MHz
I/O Type COMMON
Length 67.6 mm
Output Characteristics 3-STATE
Package Equivalence Code DIMM200,24
Peak Reflow Temperature (Cel) 260
Refresh Cycles 8192
Seated Height-Max 30.15 mm
Supply Current-Max 1.16 mA
Terminal Pitch 0.6 mm

Compare W3HG128M64EEU806D4SG with alternatives

Compare M470T2863FB3-CE6 with alternatives