Part Details for NT1GT64U8HA0BN-3C by Nanya Technology Corporation
Overview of NT1GT64U8HA0BN-3C by Nanya Technology Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for NT1GT64U8HA0BN-3C
NT1GT64U8HA0BN-3C CAD Models
NT1GT64U8HA0BN-3C Part Data Attributes
|
|
NT1GT64U8HA0BN-3C
Nanya Technology Corporation
Buy Now
Datasheet
|
Compare Parts:
NT1GT64U8HA0BN-3C
Nanya Technology Corporation
DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SODIMM-200
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NANYA TECHNOLOGY CORP | |
| Part Package Code | SODIMM | |
| Package Description | DIMM, DIMM200,24 | |
| Pin Count | 200 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Category CO2 Kg | 12 | |
| Compliance Temperature Grade | Commercial Extended: +0C to +85C | |
| EU RoHS Version | RoHS 2 (2011/65/EU) | |
| Candidate List Date | 2011-06-20 | |
| Conflict Mineral Status | DRC Conflict Free | |
| Conflict Mineral Status Source | Conflict Minerals Declaration | |
| Access Mode | DUAL BANK PAGE BURST | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XZMA-N200 | |
| JESD-609 Code | e4 | |
| Memory Density | 8589934592 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 200 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 128MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM200,24 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.08 A | |
| Supply Current-Max | 1.76 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 0.6 mm | |
| Terminal Position | ZIG-ZAG |
Alternate Parts for NT1GT64U8HA0BN-3C
This table gives cross-reference parts and alternative options found for NT1GT64U8HA0BN-3C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NT1GT64U8HA0BN-3C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| VR5DU286416FBW | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Viking Technology | NT1GT64U8HA0BN-3C vs VR5DU286416FBW |
| HYS64T128021HDL-3-B | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SO-DIMM-200 | Qimonda AG | NT1GT64U8HA0BN-3C vs HYS64T128021HDL-3-B |
| EBE11UE6ACUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | NT1GT64U8HA0BN-3C vs EBE11UE6ACUA-6E-E |
| EBE11UD8AGUA-6E-E | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Elpida Memory Inc | NT1GT64U8HA0BN-3C vs EBE11UD8AGUA-6E-E |
| HYS64T128021EDL-3-B2 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, GREEN, SO-DIMM-200 | Qimonda AG | NT1GT64U8HA0BN-3C vs HYS64T128021EDL-3-B2 |
| M470T2953CZ0-LD6 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | NT1GT64U8HA0BN-3C vs M470T2953CZ0-LD6 |
| V916765G24QBFW-F5 | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | ProMOS Technologies Inc | NT1GT64U8HA0BN-3C vs V916765G24QBFW-F5 |
| MT8HTF12864HY-667XXI | DDR DRAM Module, 128MX64, 0.45ns, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | NT1GT64U8HA0BN-3C vs MT8HTF12864HY-667XXI |
| HYS64T128020EDL-3.7-C | DDR DRAM Module, 128MX64, 0.5ns, CMOS, GREEN, SODIMM-200 | Qimonda AG | NT1GT64U8HA0BN-3C vs HYS64T128020EDL-3.7-C |
| W3HG128M64EEU665D4ISG | DDR DRAM Module, 128MX64, 0.45ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | NT1GT64U8HA0BN-3C vs W3HG128M64EEU665D4ISG |