There are no models available for this part yet.
Overview of UPD4564841G5-A10-9JF by NEC Electronics Group
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Electronic Manufacturing
Automotive
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| P9030-0NTGI | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 | |
| P9030-0NTGI8 | Renesas Electronics Corporation | Single-Chip Qi Wireless Power Transmitter for Tx-A1 and Tx-A10 |
Price & Stock for UPD4564841G5-A10-9JF by NEC Electronics Group
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | 8 |
|
$18.0000 / $20.2500 | Buy Now |
CAD Models for UPD4564841G5-A10-9JF by NEC Electronics Group
Part Data Attributes for UPD4564841G5-A10-9JF by NEC Electronics Group
|
|
|
|---|---|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
NEC ELECTRONICS CORP
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2,
|
|
Pin Count
|
54
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.02
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
6 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
JESD-30 Code
|
R-PDSO-G54
|
|
Length
|
22.22 mm
|
|
Memory Density
|
67108864 bit
|
|
Memory IC Type
|
SYNCHRONOUS DRAM
|
|
Memory Width
|
8
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
54
|
|
Number of Words
|
8388608 words
|
|
Number of Words Code
|
8000000
|
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Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
8MX8
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Supply Voltage-Max (Vsup)
|
3.6 V
|
|
Supply Voltage-Min (Vsup)
|
3 V
|
|
Supply Voltage-Nom (Vsup)
|
3.3 V
|
|
Surface Mount
|
YES
|
|
Technology
|
MOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.8 mm
|
|
Terminal Position
|
DUAL
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|
Width
|
10.16 mm
|
Alternate Parts for UPD4564841G5-A10-9JF
This table gives cross-reference parts and alternative options found for UPD4564841G5-A10-9JF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4564841G5-A10-9JF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| KM48S8030CT-GHK | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54 | Samsung Semiconductor | UPD4564841G5-A10-9JF vs KM48S8030CT-GHK |
| TC59S6408FT-80 | IC 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | UPD4564841G5-A10-9JF vs TC59S6408FT-80 |
| IBM0364804CT3-322 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | UPD4564841G5-A10-9JF vs IBM0364804CT3-322 |
| MB81F64842D-10FN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | UPD4564841G5-A10-9JF vs MB81F64842D-10FN |
| K4S640832C-TL80 | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | UPD4564841G5-A10-9JF vs K4S640832C-TL80 |
| VG36648041CT-8H | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | UPD4564841G5-A10-9JF vs VG36648041CT-8H |
| MB81F64842C-103EFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Semiconductor Limited | UPD4564841G5-A10-9JF vs MB81F64842C-103EFN |
| MT48LC8M8A2TG-8E:GIT | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Micron Technology Inc | UPD4564841G5-A10-9JF vs MT48LC8M8A2TG-8E:GIT |
| MB81F64842D-102LFN | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | FUJITSU Limited | UPD4564841G5-A10-9JF vs MB81F64842D-102LFN |
| VG36648041BT-8HA | Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | UPD4564841G5-A10-9JF vs VG36648041BT-8HA |