Datasheets
UPD44164364F5-E30-EQ1 by:

DDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165

Part Details for UPD44164364F5-E30-EQ1 by NEC Electronics Group

Overview of UPD44164364F5-E30-EQ1 by NEC Electronics Group

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Part Details for UPD44164364F5-E30-EQ1

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UPD44164364F5-E30-EQ1 Part Data Attributes:

UPD44164364F5-E30-EQ1 NEC Electronics Group
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UPD44164364F5-E30-EQ1 NEC Electronics Group DDR SRAM, 512KX36, 0.27ns, CMOS, PBGA165, 13 X 15 MM, PLASTIC, FBGA-165
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS CORP
Part Package Code BGA
Package Description BGA,
Pin Count 165
Reach Compliance Code compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.27 ns
Additional Feature PIPELINED ARCHITECTURE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 36
Number of Functions 1
Number of Terminals 165
Number of Words 524288 words
Number of Words Code 512000
Operating Mode SYNCHRONOUS
Organization 512KX36
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 13 mm

Alternate Parts for UPD44164364F5-E30-EQ1

This table gives cross-reference parts and alternative options found for UPD44164364F5-E30-EQ1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD44164364F5-E30-EQ1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K7I161884B-FC16 DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor UPD44164364F5-E30-EQ1 vs K7I161884B-FC16
AS7C33128NTD36A-200BC ZBT SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 Alliance Semiconductor Corporation UPD44164364F5-E30-EQ1 vs AS7C33128NTD36A-200BC
CY7C1345B-50AC Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Cypress Semiconductor UPD44164364F5-E30-EQ1 vs CY7C1345B-50AC
CXK77N36R160GB-3 Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Sony Semiconductor UPD44164364F5-E30-EQ1 vs CXK77N36R160GB-3
HM6AEB18202BPL50 2MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, 1 MM PITCH, PLASTIC, FBGA-165 Renesas Electronics Corporation UPD44164364F5-E30-EQ1 vs HM6AEB18202BPL50
71V3576YS150BGGI Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 Integrated Device Technology Inc UPD44164364F5-E30-EQ1 vs 71V3576YS150BGGI
IS61QDPB21M18A-300B4 QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 Integrated Silicon Solution Inc UPD44164364F5-E30-EQ1 vs IS61QDPB21M18A-300B4
K7Q163682A-FC13 QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 Samsung Semiconductor UPD44164364F5-E30-EQ1 vs K7Q163682A-FC13
CY7C1386FV25-250BGI Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 Cypress Semiconductor UPD44164364F5-E30-EQ1 vs CY7C1386FV25-250BGI
CY7C1383AV25-100AC Standard SRAM, 1MX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 Cypress Semiconductor UPD44164364F5-E30-EQ1 vs CY7C1383AV25-100AC

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