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Transistors RF Power Field-Effect Transistors UF2840G

UF2840G
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4

Overview of UF2840G by MACOM

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for UF2840G by MACOM

Part # Manufacturer Description Stock Price Buy
DISTI # 1465-1212-ND
DigiKey RF MOSFET 28V Min Qty: 40 Lead time: 24 Weeks Container: Tray Temporarily Out of Stock
  • 40 $206.9352
$206.9352 Buy Now
DISTI # 937-UF2840G
Mouser Electronics RF MOSFET Transistors 100-500MHz 40Watts 28Volt Gain 10dB 0
  • 40 $199.1300
$199.1300 Order Now
DISTI # 29471546
Verical Trans RF MOSFET N-CH 65V 4A 5-Pin RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1828 Americas - 192
  • 1 $168.8000
$168.8000 Buy Now
DISTI # UF2840G
Richardson RFPD RF POWER TRANSISTOR RoHS: Not Compliant Min Qty: 1 192
  • 1 $101.2800
$101.2800 Buy Now
DISTI # C1S500500116532
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 192
  • 1 $208.0000
  • 5 $207.0000
  • 10 $206.0000
  • 50 $204.0000
  • 100 $203.0000
$203.0000 / $208.0000 Buy Now

CAD Models for UF2840G by MACOM
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Part Data Attributes for UF2840G by MACOM
Parametric Data

UF2840G
MACOM
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description
FLANGE MOUNT, R-CDFM-F4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.75
Samacsys Manufacturer
MACOM
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
65 V
Drain Current-Max (ID)
4 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
8 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Operating Temperature-Min
-55 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
116 W
Power Dissipation-Max (Abs)
116 W
Power Gain-Min (Gp)
10 dB
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
SILICON
Want to compare parts?
  1. UF2840G
    MACOM
    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
    VS

Alternate Parts for UF2840G

This table gives cross-reference parts and alternative options found for UF2840G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UF2840G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
UF2840P 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity UF2840G vs UF2840P
BLF546 TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors UF2840G vs BLF546
934002430112 TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKGE-4, FET RF Power NXP Semiconductors UF2840G vs 934002430112
UF2840G 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity UF2840G vs UF2840G

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