Parametric results for: UF2840G under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

65 V 1

1 hit Apply

Drain Current-Max (ID) (1)

4 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

8 pF 1

1 hit Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

1 hit Apply

R-CDFM-F4 1

1 hit Apply

Manufacturer (1)

MACOM 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

200.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLANGE MOUNT 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

116 W 1

1 hit Apply

116 W 1

1 hit Apply

Power Gain-Min (Gp) (1)

10.0 dB 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply