Part Details for THMY25E11B80 by Toshiba America Electronic Components
Overview of THMY25E11B80 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for THMY25E11B80
THMY25E11B80 CAD Models
THMY25E11B80 Part Data Attributes:
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THMY25E11B80
Toshiba America Electronic Components
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Datasheet
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THMY25E11B80
Toshiba America Electronic Components
IC 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Part Package Code | DIMM | |
Package Description | DIMM, DIMM168 | |
Pin Count | 168 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | SINGLE BANK PAGE BURST | |
Access Time-Max | 6 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 125 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N168 | |
Memory Density | 2415919104 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 72 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 168 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX72 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM168 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.009 A | |
Supply Current-Max | 1.35 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL |
Alternate Parts for THMY25E11B80
This table gives cross-reference parts and alternative options found for THMY25E11B80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THMY25E11B80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V437432E24VBTG-10PC | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | Mosel Vitelic Corporation | THMY25E11B80 vs V437432E24VBTG-10PC |
MH32S72AQJA-7 | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | Mitsubishi Electric | THMY25E11B80 vs MH32S72AQJA-7 |
THMY7232F0EG-80 | IC 32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM | Toshiba America Electronic Components | THMY25E11B80 vs THMY7232F0EG-80 |
M374S3253DTU-C1H | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | THMY25E11B80 vs M374S3253DTU-C1H |
HYM72V32756AT8-S | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | SK Hynix Inc | THMY25E11B80 vs HYM72V32756AT8-S |
M390S3253BTU-C1L | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | THMY25E11B80 vs M390S3253BTU-C1L |
MT9LSDT3272Y-10EXX | Synchronous DRAM Module, 32MX72, 6ns, CMOS, LEAD FREE, MO-161, DIMM-168 | Micron Technology Inc | THMY25E11B80 vs MT9LSDT3272Y-10EXX |
HYM71V32C755BT4-8 | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | SK Hynix Inc | THMY25E11B80 vs HYM71V32C755BT4-8 |
HYM72V32C756BLT8-S | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | SK Hynix Inc | THMY25E11B80 vs HYM72V32C756BLT8-S |
M374S3253CTS-L1H | Synchronous DRAM Module, 32MX72, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | THMY25E11B80 vs M374S3253CTS-L1H |