Parametric results for: SUM110N10-09 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

4 hits Apply

Drain Current-Max (ID) (1)

110 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

9.5 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-263AB 3

4 hits Apply

R-PSSO-G2 3

4 hits Apply

e0 2 e3 2

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 2

4 hits Apply

1 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 2 200.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

SMALL OUTLINE 3

4 hits Apply

Active 2 Obsolete 1 Transferred 1

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

437.5 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply