Datasheets
STE70NM50 by: STMicroelectronics

N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET

Part Details for STE70NM50 by STMicroelectronics

Overview of STE70NM50 by STMicroelectronics

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Price & Stock for STE70NM50

Part # Distributor Description Stock Price Buy
Bristol Electronics   40
RFQ
Quest Components   32
  • 1 $40.6560
  • 14 $36.5904
  • 28 $34.5576
$34.5576 / $40.6560 Buy Now
ComSIT USA 500 V, 70 A, 0.045 OHM ISOTOP N CHANNEL ZENER, PROTECTED MDMESHPOWER MOSFET Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 20
RFQ

Part Details for STE70NM50

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STE70NM50 Part Data Attributes

STE70NM50 STMicroelectronics
Buy Now Datasheet
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STE70NM50 STMicroelectronics N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code ISOTOP
Package Description ISOTOP-4
Pin Count 4
Manufacturer Package Code ISOTOP
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 1400 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 460 W
Pulsed Drain Current-Max (IDM) 280 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STE70NM50

This table gives cross-reference parts and alternative options found for STE70NM50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STE70NM50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STE36N50-DA 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics STE70NM50 vs STE36N50-DA
FDT457N_NL Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation STE70NM50 vs FDT457N_NL
FDT459N_NL Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation STE70NM50 vs FDT459N_NL
STE26N50 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics STE70NM50 vs STE26N50
FDT459N N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ, 4000-REEL onsemi STE70NM50 vs FDT459N
APT39M60J Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation STE70NM50 vs APT39M60J
STE36N50A 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics STE70NM50 vs STE36N50A
STN2NE10 2A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics STE70NM50 vs STN2NE10
STN2NE06 2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics STE70NM50 vs STN2NE06
STN3NE06L 3A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics STE70NM50 vs STN3NE06L

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