Datasheets
FDT459N by:

N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ, 4000-REEL

Part Details for FDT459N by onsemi

Overview of FDT459N by onsemi

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Price & Stock for FDT459N

Part # Distributor Description Stock Price Buy
DISTI # FDT459N
Avnet Americas Trans MOSFET N-CH 30V 6.5A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FDT459N) RoHS: Compliant Min Qty: 1786 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 437493 Partner Stock
  • 1,786 $0.4144
  • 1,800 $0.4032
  • 3,600 $0.3920
  • 9,000 $0.3808
  • 18,000 $0.3696
  • 90,000 $0.3584
  • 180,000 $0.3472
$0.3472 / $0.4144 Buy Now
Flip Electronics Stock, ship today 437493
  • 1 $0.2800
$0.2800 RFQ

Part Details for FDT459N

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FDT459N Part Data Attributes

FDT459N onsemi
Buy Now Datasheet
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FDT459N onsemi N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ, 4000-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Manufacturer Package Code 318H-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.5 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDT459N

This table gives cross-reference parts and alternative options found for FDT459N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDT459N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STE36N50-DA 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT459N vs STE36N50-DA
FDT457N_NL Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT459N vs FDT457N_NL
FDT459N_NL Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDT459N vs FDT459N_NL
STE26N50 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT459N vs STE26N50
APT39M60J Power Field-Effect Transistor, 42A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation FDT459N vs APT39M60J
STE36N50A 36A, 500V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 STMicroelectronics FDT459N vs STE36N50A
STN2NE10 2A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT459N vs STN2NE10
STN2NE06 2A, 60V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT459N vs STN2NE06
STN3NE06L 3A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN STMicroelectronics FDT459N vs STN3NE06L
STE70NM50 N-Channel 500V - 0.045 Ohm - 70A - ISOTOP Zener-Protected MDmesh MOSFET STMicroelectronics FDT459N vs STE70NM50

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