Part Details for STB11NM60 by STMicroelectronics
Overview of STB11NM60 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Renewable Energy
Robotics and Drones
Price & Stock for STB11NM60
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh?Power MOSFET | 66000 |
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RFQ |
Part Details for STB11NM60
STB11NM60 CAD Models
STB11NM60 Part Data Attributes
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STB11NM60
STMicroelectronics
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Datasheet
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Compare Parts:
STB11NM60
STMicroelectronics
11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 350 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 44 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STB11NM60
This table gives cross-reference parts and alternative options found for STB11NM60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB11NM60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STP11NM60FD | N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package | STMicroelectronics | STB11NM60 vs STP11NM60FD |
STB11NM60N | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | STB11NM60 vs STB11NM60N |
STB11NM60T4 | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package | STMicroelectronics | STB11NM60 vs STB11NM60T4 |
STP11NM60Z | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | STB11NM60 vs STP11NM60Z |
SPP11N60CFDHKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60 vs SPP11N60CFDHKSA1 |
STD11NM60ND | N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package | STMicroelectronics | STB11NM60 vs STD11NM60ND |
SPP11N60CFDXK | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB11NM60 vs SPP11N60CFDXK |
STU11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | STB11NM60 vs STU11NM60ND |
STI11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | STB11NM60 vs STI11NM60ND |
SPW11N60CFDFKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | STB11NM60 vs SPW11N60CFDFKSA1 |