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1 - 10 of 11 results
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STB11NM60T4
STMicroelectronics
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$2.0633 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 245 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK | D2PAK-3 | 3 | not_compliant | EAR99 | 1980-01-04 | STMicroelectronics | |||||
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STB11NM60FDT4
STMicroelectronics
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$3.1612 | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | 245 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | |||||||||
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STB11NM60
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | STMicroelectronics | |||||||
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STB11NM60FD-1
STMicroelectronics
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-262AA | ROHS COMPLIANT, TO-262, I2PAK-3 | 3 | compliant | EAR99 | ||||||||
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STB11NM60-1
STMicroelectronics
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 44 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-262AA | I2PAK-3 | 3 | not_compliant | EAR99 | ||||||||||
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STB11NM60N-1
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 10 A | 450 mΩ | 200 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 90 W | 40 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Matte Tin (Sn) | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-262AA | ROHS COMPLIANT, TO-262, I2PAK-3 | 3 | not_compliant | EAR99 | ||||||
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STB11NM60FD
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 W | 44 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | |||||||||
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STB11NM60ZT4
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | STMICROELECTRONICS | SMALL OUTLINE, R-PSSO-G2 | 3 | not_compliant | EAR99 | ||||||||||
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STB11NM60Z-1
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | AVALANCHE RATED | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 44 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | 250 | 40 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | ROHS COMPLIANT, I2PAK-3 | 3 | compliant | EAR99 | |||||||||||
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STB11NM60A-1
STMicroelectronics
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 11 A | 450 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 110 W | 44 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | STMICROELECTRONICS | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 |