Datasheets
SMP50N06 by:

50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

Part Details for SMP50N06 by Texas Instruments

Overview of SMP50N06 by Texas Instruments

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Applications Energy and Power Systems Renewable Energy

Part Details for SMP50N06

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SMP50N06 Part Data Attributes

SMP50N06 Texas Instruments
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SMP50N06 Texas Instruments 50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 115 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SMP50N06

This table gives cross-reference parts and alternative options found for SMP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF9632 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SMP50N06 vs IRF9632
TK20J60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components SMP50N06 vs TK20J60W5
SPP80N06S2-09 Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SMP50N06 vs SPP80N06S2-09
IRF9612 Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor SMP50N06 vs IRF9612
STW26NM60N-H 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 STMicroelectronics SMP50N06 vs STW26NM60N-H
TK20E60W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V Toshiba America Electronic Components SMP50N06 vs TK20E60W5
VP1116N5 Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc SMP50N06 vs VP1116N5
934055716127 Power Field-Effect Transistor Nexperia SMP50N06 vs 934055716127
SML50B26F 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TT Electronics Power and Hybrid / Semelab Limited SMP50N06 vs SML50B26F
2SK3298 Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN NEC Electronics Group SMP50N06 vs 2SK3298

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