Part Details for SMP50N06 by Texas Instruments
Overview of SMP50N06 by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Part Details for SMP50N06
SMP50N06 CAD Models
SMP50N06 Part Data Attributes
|
SMP50N06
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
SMP50N06
Texas Instruments
50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 115 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SMP50N06
This table gives cross-reference parts and alternative options found for SMP50N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SMP50N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF9632 | Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SMP50N06 vs IRF9632 |
TK20J60W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SMP50N06 vs TK20J60W5 |
SPP80N06S2-09 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SMP50N06 vs SPP80N06S2-09 |
IRF9612 | Power Field-Effect Transistor, 1.5A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | SMP50N06 vs IRF9612 |
STW26NM60N-H | 20A, 600V, 0.165ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | SMP50N06 vs STW26NM60N-H |
TK20E60W5 | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V | Toshiba America Electronic Components | SMP50N06 vs TK20E60W5 |
VP1116N5 | Power Field-Effect Transistor, 1.8A I(D), 160V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Supertex Inc | SMP50N06 vs VP1116N5 |
934055716127 | Power Field-Effect Transistor | Nexperia | SMP50N06 vs 934055716127 |
SML50B26F | 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD | TT Electronics Power and Hybrid / Semelab Limited | SMP50N06 vs SML50B26F |
2SK3298 | Power Field-Effect Transistor, 7.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN | NEC Electronics Group | SMP50N06 vs 2SK3298 |