Parametric results for: SMP50N06 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 2

5 hits Apply

DS Breakdown Voltage-Min (1)

60 V 2

5 hits Apply

Drain Current-Max (ID) (1)

50 A 3

5 hits Apply

Drain-source On Resistance-Max (2)

25 mΩ 1 28 mΩ 1

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

5 hits Apply

TO-220AB 1

5 hits Apply

R-PSFM-T3 1

5 hits Apply

e0 1

5 hits Apply

Manufacturer (4)

National Semiconductor Corporation 1 Temic Semiconductors 1 Texas Instruments 2 Vishay Siliconix 1

5 hits Apply

Number of Elements (1)

1 2

5 hits Apply

Number of Terminals (1)

3 1

5 hits Apply

ENHANCEMENT MODE 3

5 hits Apply

175.0 °C 1

5 hits Apply

PLASTIC/EPOXY 1

5 hits Apply

RECTANGULAR 1

5 hits Apply

FLANGE MOUNT 1

5 hits Apply

Obsolete 4 Transferred 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

5 hits Apply

115 W 1

5 hits Apply

131 W 1

5 hits Apply

Surface Mount (1)

NO 2

5 hits Apply