There are no models available for this part yet.
Overview of SIHFR9120TR-GE3 by Vishay Siliconix
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
CAD Models for SIHFR9120TR-GE3 by Vishay Siliconix
Part Data Attributes for SIHFR9120TR-GE3 by Vishay Siliconix
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|---|---|
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Pbfree Code
|
Yes
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
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VISHAY SILICONIX
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Part Package Code
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TO-252
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Package Description
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SMALL OUTLINE, R-PSSO-G2
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Pin Count
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3
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED
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Avalanche Energy Rating (Eas)
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210 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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5.6 A
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Drain-source On Resistance-Max
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0.6 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252
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JESD-30 Code
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R-PSSO-G2
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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P-CHANNEL
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Power Dissipation-Max (Abs)
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42 W
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Pulsed Drain Current-Max (IDM)
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22 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
|
30
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for SIHFR9120TR-GE3
This table gives cross-reference parts and alternative options found for SIHFR9120TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9120TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | SIHFR9120TR-GE3 vs IRFR9120 |
| IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Harris Semiconductor | SIHFR9120TR-GE3 vs IRFR9120 |
| IRFR9120 | Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR9120TR-GE3 vs IRFR9120 |
| IRFR9120-T1 | Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR9120TR-GE3 vs IRFR9120-T1 |
| SIHFR9120-GE3 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | SIHFR9120TR-GE3 vs SIHFR9120-GE3 |
| SIHFR9120-GE3 | TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR9120TR-GE3 vs SIHFR9120-GE3 |
| IRFR9120TRL | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | SIHFR9120TR-GE3 vs IRFR9120TRL |
| IRFR9120TRPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9120TR-GE3 vs IRFR9120TRPBF |
| IRFR9120PBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR9120TR-GE3 vs IRFR9120PBF |
| IRFR9120 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | SIHFR9120TR-GE3 vs IRFR9120 |