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Transistors Power Field-Effect Transistors SIHFR9120-GE3

SIHFR9120-GE3
Description: Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

Overview of SIHFR9120-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy

Price & Stock for SIHFR9120-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # SIHFR9120-GE3
Avnet Americas MOSFET P-CHANNEL 100V - Tape and Reel (Alt: SIHFR9120-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3276
  • 6,000 $0.3171
  • 12,000 $0.3066
  • 18,000 $0.2941
  • 24,000 $0.2846
  • 30,000 $0.2712
  • 300,000 $0.2579
$0.2579 / $0.3276 Buy Now
DISTI # 78-SIHFR9120-GE3
Mouser Electronics MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant 8585
  • 1 $0.7200
  • 10 $0.6270
  • 100 $0.4340
  • 500 $0.3630
  • 1,000 $0.3090
  • 3,000 $0.2680
  • 6,000 $0.2560
  • 9,000 $0.2410
$0.2410 / $0.7200 Buy Now
Future Electronics . RoHS: Non Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks 0
  • 3,000 $0.2520
$0.2520 Buy Now
DISTI # SIHFR9120-GE3
TTI MOSFET -100V Vds 20V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube Americas - 0
  • 3,000 $0.2610
  • 6,000 $0.2540
  • 9,000 $0.2390
$0.2390 / $0.2610 Buy Now
DISTI # SIHFR9120-GE3
TME Transistor: P-MOSFET, unipolar, -100V, -5.6A, Idm: -22A, 42W Min Qty: 1 0
  • 1 $0.7590
  • 5 $0.5740
  • 25 $0.5070
  • 100 $0.4560
  • 500 $0.4260
$0.4260 / $0.7590 RFQ

CAD Models for SIHFR9120-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIHFR9120-GE3 by Vishay Intertechnologies
Parametric Data

SIHFR9120-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Vishay
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
5.6 A
Drain-source On Resistance-Max
0.6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
22 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. SIHFR9120-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
    VS

Alternate Parts for SIHFR9120-GE3

This table gives cross-reference parts and alternative options found for SIHFR9120-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR9120-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SIHFR9120-GE3 vs IRFR9120
IRFR9120 Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR9120-GE3 vs IRFR9120
IRFR9120-T1 Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR9120-GE3 vs IRFR9120-T1
SIHFR9120TR-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120TR-GE3
SIHFR9120-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120-GE3
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRL
IRFR9120TRPBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRPBF
IRFR9120PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120PBF
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120
Part Number Description Manufacturer Compare
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRL
IRFR9120TRPBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120TRPBF
SIHFR9120-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120-GE3
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor SIHFR9120-GE3 vs IRFR9120
SIHFR9120TR-GE3 TRANSISTOR 5.6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix SIHFR9120-GE3 vs SIHFR9120TR-GE3
IRFR9120 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120
IRFR9120PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies SIHFR9120-GE3 vs IRFR9120PBF
IRFR9120-T1 Power Field-Effect Transistor, 5.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor SIHFR9120-GE3 vs IRFR9120-T1
IRFR9120 5.6A, 100V, 0.6ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation SIHFR9120-GE3 vs IRFR9120
IRFR9120TRL Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix SIHFR9120-GE3 vs IRFR9120TRL

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