Part Details for SIHF9630S-GE3 by Vishay Siliconix
Overview of SIHF9630S-GE3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHF9630S-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
742-SIHF9630S-GE3TR-ND
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DigiKey | MOSFET P-CH 200V 6.5A D2PAK Min Qty: 1000 Lead time: 14 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.6137 / $0.7176 | Buy Now |
Part Details for SIHF9630S-GE3
SIHF9630S-GE3 CAD Models
SIHF9630S-GE3 Part Data Attributes
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SIHF9630S-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIHF9630S-GE3
Vishay Siliconix
TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 26 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHF9630S-GE3
This table gives cross-reference parts and alternative options found for SIHF9630S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF9630S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQB7P20TM | Power MOSFET, P-Channel, QFET®, -200 V, -7.3 A, 690 mΩ, D2PAK, 800-REEL | onsemi | SIHF9630S-GE3 vs FQB7P20TM |
FQB7P20TM_F085 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | SIHF9630S-GE3 vs FQB7P20TM_F085 |
SIHF9630STRL-GE3 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF9630S-GE3 vs SIHF9630STRL-GE3 |
SIHF9630S-GE3 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF9630S-GE3 vs SIHF9630S-GE3 |
IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | SIHF9630S-GE3 vs IRF9630S |
IRF9630SPBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Vishay Intertechnologies | SIHF9630S-GE3 vs IRF9630SPBF |
IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | SIHF9630S-GE3 vs IRF9630S |
IRF9630STRLPBF | TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF9630S-GE3 vs IRF9630STRLPBF |
IRF9630STRLPBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | SIHF9630S-GE3 vs IRF9630STRLPBF |