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Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AC4892
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Newark | Mosfet, P-Ch, -200V, -6.5A, To-263Ab, Transistor Polarity:P Channel, Continuous Drain Current Id:-6.5A, Drain Source Voltage Vds:-200V, On Resistance Rds(On):0.8Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V, Power Rohs Compliant: Yes |Vishay IRF9630SPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$1.7200 / $3.0200 | Buy Now |
DISTI #
IRF9630SPBF
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Avnet Americas | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 - Bulk (Alt: IRF9630SPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$1.2676 / $1.6104 | Buy Now |
DISTI #
844-IRF9630SPBF
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Mouser Electronics | MOSFET 200V P-CH HEXFET MOSFET RoHS: Compliant | 5340 |
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$1.2000 / $2.3800 | Buy Now |
DISTI #
E02:0323_00193667
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Arrow Electronics | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2407 | Europe - 2850 |
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$0.9407 / $1.4912 | Buy Now |
DISTI #
V99:2348_09218941
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Arrow Electronics | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2208 | Americas - 448 |
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$1.2600 / $1.4780 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 | 0 |
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$1.2400 | Buy Now |
DISTI #
77837596
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Verical | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 Min Qty: 13 Package Multiple: 1 Date Code: 2407 | Americas - 2850 |
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$0.9389 / $1.2519 | Buy Now |
DISTI #
61368218
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Verical | Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) SMD-220 Min Qty: 5 Package Multiple: 1 Date Code: 2208 | Americas - 448 |
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$1.2600 / $1.4780 | Buy Now |
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Bristol Electronics | 1432 |
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RFQ | ||
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Quest Components | 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB | 1145 |
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$1.8750 / $3.7500 | Buy Now |
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IRF9630SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF9630SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 6.5 A | |
Drain-source On Resistance-Max | 0.8 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 74 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF9630SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9630SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FQB7P20TM | Power MOSFET, P-Channel, QFET®, -200 V, -7.3 A, 690 mΩ, D2PAK, 800-REEL | onsemi | IRF9630SPBF vs FQB7P20TM |
FQB7P20TM_F085 | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | onsemi | IRF9630SPBF vs FQB7P20TM_F085 |
SIHF9630STRL-GE3 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9630SPBF vs SIHF9630STRL-GE3 |
SIHF9630S-GE3 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9630SPBF vs SIHF9630S-GE3 |
SIHF9630S-GE3 | TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF9630SPBF vs SIHF9630S-GE3 |
IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3 | Vishay Siliconix | IRF9630SPBF vs IRF9630S |
IRF9630S | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | IRF9630SPBF vs IRF9630S |
IRF9630STRLPBF | TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | IRF9630SPBF vs IRF9630STRLPBF |
IRF9630STRLPBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, | Vishay Intertechnologies | IRF9630SPBF vs IRF9630STRLPBF |