Part Details for SI4300DY-T1-E3 by Vishay Siliconix
Overview of SI4300DY-T1-E3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for SI4300DY-T1-E3
SI4300DY-T1-E3 CAD Models
SI4300DY-T1-E3 Part Data Attributes:
|
|
SI4300DY-T1-E3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI4300DY-T1-E3
Vishay Siliconix
TRANSISTOR 6400 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8, FET General Purpose Small Signal
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.4 A | |
| Drain-source On Resistance-Max | 0.0185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4300DY-T1-E3
This table gives cross-reference parts and alternative options found for SI4300DY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4300DY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDH8436L86Z | Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs NDH8436L86Z |
| FDS9412S62Z | Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs FDS9412S62Z |
| PHN103T,118 | PHN103T | NXP Semiconductors | SI4300DY-T1-E3 vs PHN103T,118 |
| NTMD4820NR2G | Dual N-Channel Power MOSFET 30V, 8.0A, 20mΩ, SOIC-8 Narrow Body, 2500-REEL | onsemi | SI4300DY-T1-E3 vs NTMD4820NR2G |
| PHN103 | TRANSISTOR 8500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Small Signal | NXP Semiconductors | SI4300DY-T1-E3 vs PHN103 |
| FDS6612AL86Z | Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs FDS6612AL86Z |
| FDS6612A | Small Signal Field-Effect Transistor, 8.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs FDS6612A |
| FDS6614AD84Z | Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs FDS6614AD84Z |
| SI4412DY-T1 | Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4300DY-T1-E3 vs SI4412DY-T1 |
| NDS9410AF011 | Small Signal Field-Effect Transistor, 7.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4300DY-T1-E3 vs NDS9410AF011 |