Part Details for SI2312DS by Vishay Siliconix
Overview of SI2312DS by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI2312DS
Part # | Distributor | Description | Stock | Price | Buy | |
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Velocity Electronics | Our Stock | 300 |
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RFQ |
Part Details for SI2312DS
SI2312DS CAD Models
SI2312DS Part Data Attributes:
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SI2312DS
Vishay Siliconix
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Datasheet
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SI2312DS
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SILICONIX INC | |
Part Package Code | SOT-23 | |
Package Description | , | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 3.77 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for SI2312DS
This table gives cross-reference parts and alternative options found for SI2312DS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2312DS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SI2312BDS-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2312DS vs SI2312BDS-T1-E3 |
SI2312BDS-T1-GE3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2312DS vs SI2312BDS-T1-GE3 |
DMG3414UQ-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | SI2312DS vs DMG3414UQ-7 |
SI2312DS-E3 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2312DS vs SI2312DS-E3 |
SI2312DS-T1 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | SI2312DS vs SI2312DS-T1 |
DMG3414U-7 | Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | SI2312DS vs DMG3414U-7 |