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Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29X0523
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Newark | Mosfet, N Channel, 20V, 3.9A, Sot-23-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:750Mw, Msl:- Rohs Compliant: Yes |Vishay SI2312BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1720 / $0.2290 | Buy Now |
DISTI #
16P3709
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Newark | N Channel Mosfet, 20V, 5A, To-236, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:850Mv, Msl:- Rohs Compliant: Yes |Vishay SI2312BDS-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.2790 | Buy Now |
DISTI #
SI2312BDS-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 12000 |
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$0.1678 / $0.2132 | Buy Now |
DISTI #
781-SI2312BDS-T1-GE3
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Mouser Electronics | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant | 602521 |
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$0.1590 / $0.5500 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 132000Reel |
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$0.1550 / $0.1670 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Cut Tape/Mini-Reel | 1287Cut Tape/Mini-Reel |
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$0.3100 / $0.5400 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohm Surface Mount Power MosFet - SOT-23-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1550 / $0.1670 | Buy Now |
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Bristol Electronics | 998 |
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RFQ | ||
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Quest Components | 1437 |
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$0.2904 / $0.7260 | Buy Now | |
DISTI #
SI2312BDS-T1-GE3
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TTI | MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 15000 In Stock |
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$0.1580 / $0.1710 | Buy Now |
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SI2312BDS-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2312BDS-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | TO-236, SOT-23, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.9 A | |
Drain-source On Resistance-Max | 0.031 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.75 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI2312BDS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2312BDS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI2312DS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | SI2312BDS-T1-GE3 vs SI2312DS |
SI2312BDS-T1-E3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2312BDS-T1-GE3 vs SI2312BDS-T1-E3 |
DMG3414UQ-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | SI2312BDS-T1-GE3 vs DMG3414UQ-7 |
SI2312DS-E3 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2312BDS-T1-GE3 vs SI2312DS-E3 |
SI2312DS-T1 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | SI2312BDS-T1-GE3 vs SI2312DS-T1 |
DMG3414U-7 | Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | SI2312BDS-T1-GE3 vs DMG3414U-7 |