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Part Details for SI2312BDS-T1-E3 by Vishay Intertechnologies
Overview of SI2312BDS-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2312BDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
51K6950
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Newark | N Channel Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:850Mv, Power Dissipation:750Mw Rohs Compliant: Yes |Vishay SI2312BDS-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 13215 |
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$0.2670 / $0.2910 | Buy Now |
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DISTI #
85W0175
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Newark | Mosfet, N Channel, 20V, 0.025Ohm, 3.9A, Sot-23-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SI2312BDS-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2070 / $0.2110 | Buy Now |
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DISTI #
SI2312BDS-T1-E3
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Avnet Americas | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.1362 / $0.1685 | Buy Now |
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DISTI #
SI2312BDS-T1-E3
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Avnet Americas | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.1362 / $0.1730 | Buy Now |
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DISTI #
51K6950
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Avnet Americas | Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 51K6950) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 4 Days Container: Ammo Pack | 13215 Partner Stock |
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$0.3190 / $0.5890 | Buy Now |
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DISTI #
781-SI2312BDS-E3
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Mouser Electronics | MOSFET N-Channel 20V 3.9A RoHS: Compliant | 269915 |
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$0.1910 / $0.5500 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 66000Reel |
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$0.1390 / $0.1490 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.1340 / $0.1440 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1430 / $0.1540 | Buy Now |
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Future Electronics | Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.1430 / $0.1930 | Buy Now |
Part Details for SI2312BDS-T1-E3
SI2312BDS-T1-E3 CAD Models
SI2312BDS-T1-E3 Part Data Attributes:
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SI2312BDS-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI2312BDS-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TO-236, SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.75 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SI2312BDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2312BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2312BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI2312DS | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | SI2312BDS-T1-E3 vs SI2312DS |
| SI2312BDS-T1-GE3 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | Vishay Intertechnologies | SI2312BDS-T1-E3 vs SI2312BDS-T1-GE3 |
| DMG3414UQ-7 | Small Signal Field-Effect Transistor, | Diodes Incorporated | SI2312BDS-T1-E3 vs DMG3414UQ-7 |
| SI2312DS-E3 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | SI2312BDS-T1-E3 vs SI2312DS-E3 |
| SI2312DS-T1 | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | Vishay Siliconix | SI2312BDS-T1-E3 vs SI2312DS-T1 |
| DMG3414U-7 | Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | SI2312BDS-T1-E3 vs DMG3414U-7 |