Datasheets
SGR6N60UFTF by:

Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3

Part Details for SGR6N60UFTF by Fairchild Semiconductor Corporation

Overview of SGR6N60UFTF by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SGR6N60UFTF

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SGR6N60UFTF Part Data Attributes:

SGR6N60UFTF Fairchild Semiconductor Corporation
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SGR6N60UFTF Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 6 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 150 ns
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 202 ns
Turn-on Time-Nom (ton) 54 ns

Alternate Parts for SGR6N60UFTF

This table gives cross-reference parts and alternative options found for SGR6N60UFTF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGR6N60UFTF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SGR6N60UF Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation SGR6N60UFTF vs SGR6N60UF
Part Number Description Manufacturer Compare
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG SGR6N60UFTF vs IRG4RC10KTRLPBF
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGR6N60UFTF vs IRG4RC10KTRL
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG SGR6N60UFTF vs IRG4RC10KTRL
STGD3NB60HT4 6A, 600V, N-CHANNEL IGBT, TO-252, DPAK-3 STMicroelectronics SGR6N60UFTF vs STGD3NB60HT4
HGTD3N60B3 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC PACKAGE-3 Harris Semiconductor SGR6N60UFTF vs HGTD3N60B3
IRG4RC10KTR Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier SGR6N60UFTF vs IRG4RC10KTR
HGTD3N60C3S Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation SGR6N60UFTF vs HGTD3N60C3S
HGTD3N60C3 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA Harris Semiconductor SGR6N60UFTF vs HGTD3N60C3
HGTD3N60B3S9A Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation SGR6N60UFTF vs HGTD3N60B3S9A
SGR2N60UFTM Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation SGR6N60UFTF vs SGR2N60UFTM

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